4 December 2007 High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting
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Abstract
Nano-patterning sapphire substrates technique has been developed for nitrides light-emitting diodes (LEDs) growths. It is expected that the strain induced by the lattice misfits between the GaN epilayers and the sapphire substrates can be effectively accommodated via the nano-trenches. The GaN epilayers grown on the nano-patterned sapphire substrates by a low-pressure metal organic chemical vapor deposition (MOCVD) are characterized by means of scanning electron microscopy (SEM), high-resolution x-ray diffraction (HRXRD) and photoluminescence (PL) techniques. In comparison with the planar sapphire substrate, about 46% increment in device performance is measured for the InGaN/GaN blue LEDs grown on the nano-patterned sapphire substrates.
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Fawang Yan, Fawang Yan, Haiyong Gao, Haiyong Gao, Yang Zhang, Yang Zhang, Jinmin Li, Jinmin Li, Yiping Zeng, Yiping Zeng, Guohong Wang, Guohong Wang, Fuhua Yang, Fuhua Yang, } "High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting", Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 684103 (4 December 2007); doi: 10.1117/12.755420; https://doi.org/10.1117/12.755420
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