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4 January 2008 Improvement of GaN-based light emitting diodes performance grown on sapphire substrates patterned by wet etching
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Abstract
An effective approach to enhance the light output power of InGaN/GaN light emitting diodes (LED) was proposed using pyramidal patterned sapphire substrates (PSS). The sapphire substrates were patterned by a selective chemical wet etching technique. GaN-based LEDs were fabricated on patterned sapphire substrates through metal organic chemical deposition (MOCVD). The LEDs fabricated on patterned sapphire substrates exhibit excellent device performance compared to the conventional LEDs fabricated on planar sapphire substrates in the case of the same growth and device fabricating conditions. The light output power of the LEDs fabricated on patterned sapphire substrates was about 37% higher than that of LEDs on planar sapphire substrates at an injection current of 20 mA. The significant enhancement is attributable to the improvement of the quality of GaN-based epilayers and improvement of the light extraction efficiency by patterned sapphire substrates.
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Haiyong Gao, Fawang Yan, Yang Zhang, Jinmin Li, Yiping Zeng, Guohong Wang, and Fuhua Yang "Improvement of GaN-based light emitting diodes performance grown on sapphire substrates patterned by wet etching", Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 684107 (4 January 2008); https://doi.org/10.1117/12.760029
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