4 January 2008 Characterization of bulk ZnO single crystal grown by a CVT method
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Abstract
Hall effect, photoluminescence spectroscopy (PL), mass spectroscopy and X-ray diffraction have been used to study bulk ZnO single crystal grown by a closed seeded chemical vapor transport method. Enhancement of n-type electrical conduction and increase of nitrogen concentration are observed of the ZnO samples after high temperature annealing. The results suggest that vacancy is dominant native defect in the ZnO material. These phenomena are explained by a generation of shallow donor defect and suppression of deep level defects in ZnO after the annealing.
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Xuecheng Wei, Youwen Zhao, Zhiyuan Dong, Jinmin Li, "Characterization of bulk ZnO single crystal grown by a CVT method", Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68410F (4 January 2008); doi: 10.1117/12.759322; https://doi.org/10.1117/12.759322
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