4 January 2008 Novel photonic crystal structure GaN-based light-emitting diodes
Author Affiliations +
Proceedings Volume 6841, Solid State Lighting and Solar Energy Technologies; 68410J (2008); doi: 10.1117/12.758788
Event: Photonics Asia 2007, 2007, Beijing, China
For enhancing the output efficiency of GaN light-emitting diode(LED), we calculated the band structure of photonic crystal(PhC), and designed and fabricated several novel GaN LEDs with photonic crystal on Indium-Tin-Oxide(ITO), which as p-type transparent contact of GaN LED. In this fabricating process, we developed conventional techniques in order that these methods can be easily applied to industrial volume-production. And we have done some preliminary experiments and obtained some results.
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HaiYang Hu, Lin Lu, Wei Du, HongWei Liu, Qiang Kan, ChunXia Wang, XingSheng Xu, HongDa Chen, "Novel photonic crystal structure GaN-based light-emitting diodes", Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68410J (4 January 2008); doi: 10.1117/12.758788; https://doi.org/10.1117/12.758788

Light emitting diodes

Gallium nitride

Photonic crystals


Band structure simulations


Finite-difference time-domain method

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