4 January 2008 Novel photonic crystal structure GaN-based light-emitting diodes
Author Affiliations +
Proceedings Volume 6841, Solid State Lighting and Solar Energy Technologies; 68410J (2008); doi: 10.1117/12.758788
Event: Photonics Asia 2007, 2007, Beijing, China
Abstract
For enhancing the output efficiency of GaN light-emitting diode(LED), we calculated the band structure of photonic crystal(PhC), and designed and fabricated several novel GaN LEDs with photonic crystal on Indium-Tin-Oxide(ITO), which as p-type transparent contact of GaN LED. In this fabricating process, we developed conventional techniques in order that these methods can be easily applied to industrial volume-production. And we have done some preliminary experiments and obtained some results.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
HaiYang Hu, Lin Lu, Wei Du, HongWei Liu, Qiang Kan, ChunXia Wang, XingSheng Xu, HongDa Chen, "Novel photonic crystal structure GaN-based light-emitting diodes", Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68410J (4 January 2008); doi: 10.1117/12.758788; https://doi.org/10.1117/12.758788
PROCEEDINGS
4 PAGES


SHARE
KEYWORDS
Light emitting diodes

Gallium nitride

Photonic crystals

Electrodes

Band structure simulations

Fabrication

Finite-difference time-domain method

Back to Top