4 January 2008 Novel photonic crystal structure GaN-based light-emitting diodes
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Abstract
For enhancing the output efficiency of GaN light-emitting diode(LED), we calculated the band structure of photonic crystal(PhC), and designed and fabricated several novel GaN LEDs with photonic crystal on Indium-Tin-Oxide(ITO), which as p-type transparent contact of GaN LED. In this fabricating process, we developed conventional techniques in order that these methods can be easily applied to industrial volume-production. And we have done some preliminary experiments and obtained some results.
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HaiYang Hu, HaiYang Hu, Lin Lu, Lin Lu, Wei Du, Wei Du, HongWei Liu, HongWei Liu, Qiang Kan, Qiang Kan, ChunXia Wang, ChunXia Wang, XingSheng Xu, XingSheng Xu, HongDa Chen, HongDa Chen, } "Novel photonic crystal structure GaN-based light-emitting diodes", Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68410J (4 January 2008); doi: 10.1117/12.758788; https://doi.org/10.1117/12.758788
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