4 January 2008 Characterization of AlGaN on GaN template grown by MOCVD
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AlxGa1-xN layer was grown on sapphire substrate with GaN template by Metal Organic Chemical Vapor Deposition system (MOCVD). High temperature AlN (HT-AlN) interlayer was inserted between AlxGa1-xN layer and GaN template to solve the cracking problem that often appears on AlxGa1-xN surface when directly grown on high temperature GaN template. Optical microscope, scanning electron microscopy (SEM), atomic force microscope (AFM), high resolution x-ray diffraction (HRXRD) and cathodoluminescence (CL) were used for characterization. It was found that the cracking was successfully eliminated. Furthermore, the crystalline quality of AlxGa1-xN layer with HT-AlN interlayer was much improved. Interference fringes were found in the HRXRD images. CL test showed that yellow emission was much reduced for AlGaN layer with HT-AlN interlayer.
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Jianchang Yan, Jianchang Yan, Junxi Wang, Junxi Wang, Naixin Liu, Naixin Liu, Zhe Liu, Zhe Liu, Jinmin Li, Jinmin Li, } "Characterization of AlGaN on GaN template grown by MOCVD", Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68410K (4 January 2008); doi: 10.1117/12.755635; https://doi.org/10.1117/12.755635


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