4 January 2008 Characterization of AlGaN on GaN template grown by MOCVD
Author Affiliations +
Abstract
AlxGa1-xN layer was grown on sapphire substrate with GaN template by Metal Organic Chemical Vapor Deposition system (MOCVD). High temperature AlN (HT-AlN) interlayer was inserted between AlxGa1-xN layer and GaN template to solve the cracking problem that often appears on AlxGa1-xN surface when directly grown on high temperature GaN template. Optical microscope, scanning electron microscopy (SEM), atomic force microscope (AFM), high resolution x-ray diffraction (HRXRD) and cathodoluminescence (CL) were used for characterization. It was found that the cracking was successfully eliminated. Furthermore, the crystalline quality of AlxGa1-xN layer with HT-AlN interlayer was much improved. Interference fringes were found in the HRXRD images. CL test showed that yellow emission was much reduced for AlGaN layer with HT-AlN interlayer.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jianchang Yan, Jianchang Yan, Junxi Wang, Junxi Wang, Naixin Liu, Naixin Liu, Zhe Liu, Zhe Liu, Jinmin Li, Jinmin Li, } "Characterization of AlGaN on GaN template grown by MOCVD", Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68410K (4 January 2008); doi: 10.1117/12.755635; https://doi.org/10.1117/12.755635
PROCEEDINGS
6 PAGES


SHARE
RELATED CONTENT


Back to Top