4 January 2008 AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers
Author Affiliations +
Abstract
We investigated AlGaN layers grown by metalorganic chemical vapor deposition (MOCVD) on high temperature (HT-)GaN and AlGaN buffer layers. On GaN buffer layer, there are a lot of surface cracking because of tensile strain in subsequent AlGaN epilayers. On HT-AlGaN buffer layer, not only cracks but also high densities rounded pits present, which is related to the high density of coalescence boundaries in HT-AlGaN growth process. The insertion of interlayer (IL) between AlGaN and the GaN pseudosubstrate can not only avoid cracking by modifying the strain status of the epilayer structure, but also improved Al incorporation efficiency and lead to phase-separation. And we also found the growth temperature of IL is a critical parameter for crystalline quality of subsequent AlGaN epilayer. Low temperature (LT-) AlN IL lead to a inferior quality in subsequent AlGaN epilayers.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. X. Liu, J. C. Yan, Z. Liu, P. Ma, J. X. Wang, J. M. Li, "AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers", Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68410S (4 January 2008); doi: 10.1117/12.756715; https://doi.org/10.1117/12.756715
PROCEEDINGS
8 PAGES


SHARE
RELATED CONTENT

Strain engineered high reflectivity DBRs in the deep UV
Proceedings of SPIE (February 26 2016)
Fabrication of UV devices on various plane substrates
Proceedings of SPIE (April 01 2005)
Characterization of AlGaN on GaN template grown by MOCVD
Proceedings of SPIE (January 04 2008)
Growth and Characterization of AlxGa1-xN on GaN/Al2O3
Proceedings of SPIE (October 15 2012)
Growth of low defect AlGaN by lateral epitaxy over V...
Proceedings of SPIE (September 21 2006)

Back to Top