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4 January 2008 High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate
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Patterning sapphire substrate can relax the stress in the nitride epilayer, reduce the threading dislocation density, and significantly improve device performance. In this article, a wet-etching method for sapphire substrate is developed. The effect of substrate surface topographies on the quality of the GaN epilayers and corresponding device performance are investigated. The GaN epilayers grown on the wet-patterned sapphire substrates by MOCVD are characterized by means of scanning electrical microscopy (SEM), atomic force microscopy (AFM), high-resolution x-ray diffraction (HRXRD), and photoluminescence (PL) techniques. In comparison with the planar sapphire substrate, about a 22% increase in device performance with light output power of 13.31 mW@20mA is measured for the InGaN/GaN blue LEDs grown on the wet-patterned sapphire substrate.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yang Zhang, Fawang Yan, Haiyong Gao, Jinmin Li, Yiping Zeng, Guohong Wang, and Fuhua Yang "High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate", Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68410T (4 January 2008);

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