4 January 2008 Plasma-induced damage in GaN-based light emitting diodes
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Abstract
The effects of plasma induced damage in different conditions of ICP and PECVD processes on LEDs were presented. For ICP mesa etch, in an effort to confirm the effects of dry etch damage on the optical properties of p-type GaN, a photoluminescence (PL) measurement was investigated with different rf chuck power. It was founded the PL intensity of the peak decreased with increasing DC bias and the intensity of sample etched at a higher DC bias of -400V is less by two orders of magnitude than that of the as-grown sample. Meanwhile, In the I-V curve for the etched samples with different DC biases, the reverse leakage current of higher DC bias sample was obviously degraded than the lower one. In addition, plasma induced damage was also inevitable during the deposition of etch masks and surface passivation films by PECVD. The PL intensity of samples deposited with different powers sharply decreased when the power was excessive. The PL spectra of samples deposited under the fixed condition with the different processing time were measured, indicating the intensity of sample deposited with a lower power did not obviously vary after a long time deposition. A two-layer film was made in order to improve the compactness of sparse dielectric film deposited with a lower power.
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Yan Li, Yan Li, Xiaoyan Yi, Xiaoyan Yi, Xiaodong Wang, Xiaodong Wang, Jinxia Guo, Jinxia Guo, Liangchen Wang, Liangchen Wang, Guohong Wang, Guohong Wang, Fuhua Yang, Fuhua Yang, Yiping Zeng, Yiping Zeng, Jinmin Li, Jinmin Li, } "Plasma-induced damage in GaN-based light emitting diodes", Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68410X (4 January 2008); doi: 10.1117/12.759809; https://doi.org/10.1117/12.759809
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