4 January 2008 Thermal analysis of high power GaN-based light emitting diode
Author Affiliations +
Proceedings Volume 6841, Solid State Lighting and Solar Energy Technologies; 68410Z (2008); doi: 10.1117/12.760019
Event: Photonics Asia 2007, 2007, Beijing, China
In this paper we present thermal analysis of three different-structured high power LEDs. The thermal resistance of different-structured LEDs was determined. The results indicated that the thermal resistance severely depended on the number of bumps for flip-chip LEDs. One could get lower thermal resistance for flip-chip LEDs than that for conventional and vertical LEDs by selecting appropriate number of bumps in theory. But considering the practical process of LEDs' fabrication, the conventional LEDs because of the simple making process showed more stable and lower thermal resistance. There existed the same problems as flip-chip LEDs' for vertical LEDs. Maybe electroplate copper was the effective way to get good thermal characteristic.
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Debo Guo, Libin Wang, Zhiqiang Liu, Meng Liang, Manning Fan, Guohong Wang, Liangchen Wang, Jinmin Li, "Thermal analysis of high power GaN-based light emitting diode", Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68410Z (4 January 2008); doi: 10.1117/12.760019; https://doi.org/10.1117/12.760019

Light emitting diodes


Thermal analysis


Gallium nitride


Fluctuations and noise


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