4 January 2008 Investigation on time-resolved photoluminescence of InGaN single quantum well structure grown by metalorganic chemical vapor deposition
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Abstract
The time-resolved photoluminescence spectra were investigated on the basis of transmission, reflection and photoluminescence studies of the InGaN single quantum well structure grown by metalorganic chemical vapor deposition. It was found that the temporal responses of photoluminescence decay exhibited exponential function. The multi-peak structure of the photoluminescence spectra was attributed to the Fabry-Perot interference effect in the GaN/InGaN/GaN vertical cavity.
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Jinshe Yuan, Jinshe Yuan, Mingyue Wang, Mingyue Wang, Guohao Yu, Guohao Yu, } "Investigation on time-resolved photoluminescence of InGaN single quantum well structure grown by metalorganic chemical vapor deposition", Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68411M (4 January 2008); doi: 10.1117/12.757818; https://doi.org/10.1117/12.757818
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