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10 December 1986 Flash Technology for CCD Imaging in the UV
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Abstract
The introduction of the flash gate has made possible the fabrication of backside-illuminated CCDs with high sensitiv4y and stability throughout a wide range of ultraviolet and visible wavelengths (100-5000 Å). It has been determined that the characteristics of the oxide layer beneath the gate are critical to the ultimate performance that can be achieved. By creating an improved oxide layer in conjunction with the flash gate, we are now able to consistently produce CCDs with near-ideal UV performance. In the interest of transferring flash technology to industry, we present in this paper recent results and related background theory that optimize the flash gate specifically for application in the UV.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James Janesick, Dave Campbell, Tom Elliott, Taher Daud, and Priscilla Ottley "Flash Technology for CCD Imaging in the UV", Proc. SPIE 0687, Ultraviolet Technology, (10 December 1986); https://doi.org/10.1117/12.936542
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