14 February 2008 High-power slab-based Tm:YLF laser for in-band pumping of Ho:YAG
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Proceedings Volume 6871, Solid State Lasers XVII: Technology and Devices; 68710R (2008); doi: 10.1117/12.761822
Event: Lasers and Applications in Science and Engineering, 2008, San Jose, California, United States
Abstract
Several remote sensing applications require pulsed sources in the mid-infrared spectral regime with high average powers and good beam quality. Ho:YAG lasers have a number of attractive features for high power generation at 2.1microns, either for direct applications or as a pump source for parametric conversion to longer infra-red wavelengths. Unfortunately, direct diode pumping of Ho:YAG is not practical, so a two-step process is generally employed in which one or more diode-pumped thulium-doped lasers are used to directly pump (in-band) the Ho:YAG laser. In response, we have investigated a slab-based architecture for scaling the output power of a Tm:YLF laser to the 100W power regime at 1.91microns, corresponding to a strong Ho:YAG absorption line. Multiple slab lasers with moderate beam quality in the plane of the slab can be combined to efficiently end-pump a low-doping concentration Ho:YAG rod in a pump-guided configuration. In a preliminary demonstration, two 2at.% doped Tm:YLF slab lasers with a spatially multiplexed output of 74W were employed to end-pump a 1.5mm diameter, 80mm long, 0.25at.% Ho:YAG barrel-polished rod. A two-mirror plano-concave cavity, with 11% output coupling transmission, produced a CW output of 38W with a slope efficiency of 60% with respect to the incident power. Q-switched operation at a repetition rate of 20Hz with two intra-cavity Brewster plate polarizers and a 60% transmitting output coupler produced 14mJ pulses with a pulse duration (FWHM) of 18ns. This architecture offers an attractive route for future high-power 2micron lasers.
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S. So, J. I. Mackenzie, D. P. Shepherd, W. A. Clarkson, "High-power slab-based Tm:YLF laser for in-band pumping of Ho:YAG", Proc. SPIE 6871, Solid State Lasers XVII: Technology and Devices, 68710R (14 February 2008); doi: 10.1117/12.761822; https://doi.org/10.1117/12.761822
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KEYWORDS
Absorption

Holmium

Thulium

Semiconductor lasers

Output couplers

Crystals

Diodes

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