13 March 2008 Pulsed passively mode locked operation of diode pumped Nd:GdVO4 and Nd:YVO4 in a bounce geometry
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Abstract
The operation of pulsed diode pumped Nd:GdVO4 and Nd:YVO4 slab lasers in a bounce geometry in a free running and a passively mode-locked regime using a semiconductor saturable absorber was demonstrated. Higher efficiency of Nd:GdVO4 in both regimes was achieved. In the free running regime the optical to optical efficiency of 28.3% was obtained with Nd:YVO4 and 39.3% with Nd:GdVO4 crystal in spatial mode close to TEM00. In the passively mode locked regime the Q-switched and mode locked single trains containing 5 pulses were generated for a pump energy of 11 mJ from Nd:YVO4 while the pump energy for Nd:GdVO4 was only 5.5 mJ. The pulse duration was 48 ps and 65 ps respectively. Our results clearly demonstrate the advantage of using Nd:GdVO4 in a pulsed free running and also a passively mode locked diode pumped regime in a bounce geometry.
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Václav Kubeček, Václav Kubeček, Michal Drahokoupil, Michal Drahokoupil, Helena Jelínková, Helena Jelínková, Andreas Stintz, Andreas Stintz, Jean-Claude Diels, Jean-Claude Diels, } "Pulsed passively mode locked operation of diode pumped Nd:GdVO4 and Nd:YVO4 in a bounce geometry", Proc. SPIE 6871, Solid State Lasers XVII: Technology and Devices, 68710S (13 March 2008); doi: 10.1117/12.763231; https://doi.org/10.1117/12.763231
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