14 February 2008 High-performance optically pumped GaSb-based semiconductor disk lasers for the 2.Xμm wavelength range
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Abstract
We report on recent advances in the performance of GaSb-based optically pumped semiconductor disk lasers (OPSDLs), emitting in the 2.0 - 2.3 μm wavelength range. Both barrier pumped OPSDL (using 980 nm laser diodes as pump source) and in-well pumped OPSDL (using 1.96 μm pump radiation) have been fabricated and characterized. Using alternative SiC or diamond intracavity heatspreader, multiple-watt CW-output powers have been achieved (e.g. >3W at 2.3 μm and >5W at 2.0 μm), with power efficiencies in the range of 18 % - 25 %. For an optimised resonator setup, the beam profile is close to the diffraction limit with M2 values around 1.2; and even for the highest power levels, M2 is in the range of 2-5.
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M. Rattunde, M. Rattunde, N. Schulz, N. Schulz, B. Rösener, B. Rösener, C. Manz, C. Manz, K. Köhler, K. Köhler, J. Wagner, J. Wagner, J.-M. Hopkins, J.-M. Hopkins, D. Burns, D. Burns, } "High-performance optically pumped GaSb-based semiconductor disk lasers for the 2.Xμm wavelength range", Proc. SPIE 6871, Solid State Lasers XVII: Technology and Devices, 68710Z (14 February 2008); doi: 10.1117/12.762873; https://doi.org/10.1117/12.762873
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