14 February 2008 Interfacial misfit dislocation array based growth of III-Sb active regions on GaAs/AlGaAs DBRs for high-power 2 μm VECSELs
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Proceedings Volume 6871, Solid State Lasers XVII: Technology and Devices; 687111 (2008); doi: 10.1117/12.776256
Event: Lasers and Applications in Science and Engineering, 2008, San Jose, California, United States
Abstract
This presentation will overview the growth of an IMF based VECSEL structure operating at 2 μm with an InGaSb QW active region (a0 = 6.09 Å) on GaAs/AlGaAs distributed bragg reflectors (DBR) (a0 = 5.65 Å). The use of the GaAs substrate instead of GaSb results in a significant reduction in the surface defect density while allowing the use of a mature GaAs/AlGaAs DBR technology. We shall provide photoluminescence results from 2 μm IMF based active regions grown on GaAs substrates and compare the results with the same active regions grown on GaSb substrates. We shall also provide extensive transmission electron microscopy, surface morphology and high-resolution x-ray diffraction analysis of the material grown.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Balakrishnan, T. J. Rotter, A. Jallipalli, L. R. Dawson, D. L. Huffaker, "Interfacial misfit dislocation array based growth of III-Sb active regions on GaAs/AlGaAs DBRs for high-power 2 μm VECSELs", Proc. SPIE 6871, Solid State Lasers XVII: Technology and Devices, 687111 (14 February 2008); doi: 10.1117/12.776256; https://doi.org/10.1117/12.776256
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KEYWORDS
Gallium arsenide

Gallium antimonide

Quantum wells

Transmission electron microscopy

Antimony

Luminescence

Laser applications

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