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14 February 2008 1-W red light generation by intracavity doubling in a 1240 nm GaInNAs semiconductor disk laser
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Abstract
Owing to their good beam quality and high output power, near-infrared semiconductor disk lasers provide an attractive opportunity for visible light generation via frequency conversion. The typical cavity arrangement of a semiconductor disk laser, consisting of a semiconductor multiple quantum well gain mirror and one or more external mirror, offers a convenient configuration for intracavity frequency doubling. Recent progress in the disk laser development has led to demonstrations of multi-watt green-blue-yellow sources. These achievements have been enabled by the possibility to integrate high performance InGaAs/GaAs gain media and Al(Ga)As/GaAs Bragg reflectors operating in the 940-1160 nm wavelength range. In order to achieve ~620 nm red emission, a laser emitting near the fundamental wavelength of 1240 nm is needed. To achieve this spectral range we have developed GaInNAs/GaAs gain mirrors and we have achieved 1 W of output power at 617 nm by frequency doubling in a BBO crystal. This is to our knowledge the highest power reported to date for intracavity doubled disk laser based on dilute nitride gain material.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jussi Rautiainen, Antti Härkönen, Pietari Tuomisto, Janne Konttinen, Lasse Orsila, Mircea Guina, and Oleg G. Okhotnikov "1-W red light generation by intracavity doubling in a 1240 nm GaInNAs semiconductor disk laser", Proc. SPIE 6871, Solid State Lasers XVII: Technology and Devices, 68711A (14 February 2008); https://doi.org/10.1117/12.762857
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