Paper
20 February 2008 1 W of 261 nm cw generation in a Pr3+:LiYF4 laser pumped by an optically pumped semiconductor laser at 479 nm
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Abstract
The lack of blue pump sources for Pr-doped materials has been overcome with the recent progress in optically pumped semiconductor lasers (OPS) operating at 479 nm. The availability of reliable high power OPS pump lasers, makes Pr3+-doped crystals ideal gain media for compact and efficient ultraviolet solid-state lasers with output power in the Watt range. We report on the scalability of a 522/261 nm Pr:YLF cw laser that is dual-end-pumped by two OPS lasers at 479 nm. At 9.6 W of incident pump power more than 4 W were obtained at 522 nm with a slope efficiency of 45%. Intracavity frequency doubling of 522 nm resulted in 1 Watt of cw UV output at 261 nm.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vasiliy Ostroumov and Wolf Seelert "1 W of 261 nm cw generation in a Pr3+:LiYF4 laser pumped by an optically pumped semiconductor laser at 479 nm", Proc. SPIE 6871, Solid State Lasers XVII: Technology and Devices, 68711K (20 February 2008); https://doi.org/10.1117/12.767511
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Cited by 15 scholarly publications.
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KEYWORDS
Ultraviolet radiation

Semiconductor lasers

Continuous wave operation

Crystals

Optical pumping

Laser crystals

Resonators

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