14 February 2008 AlGaInAs quantum-well 1.3-μm laser by a diode-pumped actively Q-switched Nd:GdVO4 laser
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Abstract
We report a high-peak-power AlGaInAs 1.36-μm vertical-external-cavity surface-emitting laser (VECSEL) optically pumped by a diode-pumped actively Q-switched Nd:GdVO4 1.06-µm laser under room-temperature operation. The gain medium is an AlGaInAs quantum wells (QWs)/barrier structure grown on a Fe-doped InP substrate by metalorganic chemical-vapor deposition. With an average pump power of 1.9 W, an average output power of 340 mW was obtained at a pulse repetition rate of 40 kHz, corresponding to an optical-to-optical conversion efficiency of 18.76%. With a peak pump power of 7.9 kW, the highest peak output power was 1.3 kW at a pulse repetition rate of 10 kHz.
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S. C. Huang, S. C. Huang, K. W. Su, K. W. Su, A. Li, A. Li, S. C. Liu, S. C. Liu, Y. F. Chen, Y. F. Chen, K. F. Huang, K. F. Huang, } "AlGaInAs quantum-well 1.3-μm laser by a diode-pumped actively Q-switched Nd:GdVO4 laser", Proc. SPIE 6871, Solid State Lasers XVII: Technology and Devices, 68712K (14 February 2008); doi: 10.1117/12.762962; https://doi.org/10.1117/12.762962
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