13 March 2008 High-peak-power flashlamp-pumped passively Q-switched Nd:YAG laser with AlGaInAs quantum wells as a saturable absorber
Author Affiliations +
Abstract
We demonstrate an AlGaInAs saturable absorber with a periodic quantum wells (QWs)/barrier structure that can be used to achieve an efficient high-peak-power and high-pulse-energy passively flashlamp-pumped Q-switched Nd:YAG laser at 1.06 um. The barrier layers are designed to locate the QW groups in the region of the nodes of the lasing standing wave to avoid damage. With an incident pump voltage of 14.5 J, a single pulse was generated with a pulse energy of 14 mJ and a Q-switched pulse width of 13 ns. The maximum peak power was greater than 1.08 MW.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. C. Liang, J. Y. Huang, S. C. Huang, K. W. Su, Y. F. Chen, K. F. Huang, "High-peak-power flashlamp-pumped passively Q-switched Nd:YAG laser with AlGaInAs quantum wells as a saturable absorber", Proc. SPIE 6871, Solid State Lasers XVII: Technology and Devices, 68712M (13 March 2008); doi: 10.1117/12.763052; https://doi.org/10.1117/12.763052
PROCEEDINGS
8 PAGES


SHARE
RELATED CONTENT

Microchip laser based on Yb:YAG/V:YAG monolith crystal
Proceedings of SPIE (March 16 2016)
Diode pumped CW and passively Q switched lasers of Nd...
Proceedings of SPIE (April 22 2016)
Multi watt passively Q switched Yb YAB Cr YAG microchip...
Proceedings of SPIE (February 17 2017)
Diode-laser-side-pumped Nd:YAG Q-switch TEM00 laser
Proceedings of SPIE (September 30 1996)
Reduction in timing jitter for a Cr YAG Q switched...
Proceedings of SPIE (February 17 2010)

Back to Top