Paper
13 February 2008 Progress in orientation-patterned GaAs for next-generation nonlinear optical devices
Rita D. Peterson, David Bliss, Candace Lynch, David H. Tomich
Author Affiliations +
Abstract
Orientation-patterned GaAs (OPGaAs) shows great promise as a nonlinear optical material for frequency conversion in the 2-5 μm and 8-12 μm regions. We report recent progress in each of the three main areas of OPGaAs development: fabrication of patterned templates using a combination of wafer bonding and MBE techniques; thick-layer HVPE growth; and material and OPO device characterization. This work has led to significant improvements in material quality, specifically reduced optical loss, increased sample thickness, improved patterned domain fidelity, and greater material uniformity. Advances in material quality have in turn enabled demonstration of OPO devices operating in the 3-5 μm spectral region. Optical loss and OPO performance measurements on a series of OPGaAs samples are presented, with the goal of understanding how these properties are influenced by growth conditions, and how OPO performance may be improved. Research continues on understanding loss mechanisms, correlating performance with material properties, transitioning the technology into an industrial process, and extending it to additional materials.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rita D. Peterson, David Bliss, Candace Lynch, and David H. Tomich "Progress in orientation-patterned GaAs for next-generation nonlinear optical devices", Proc. SPIE 6875, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications VII, 68750D (13 February 2008); https://doi.org/10.1117/12.766581
Lens.org Logo
CITATIONS
Cited by 11 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Gallium arsenide

Optical parametric oscillators

Absorption

Wafer bonding

Frequency conversion

Semiconducting wafers

Fabrication

Back to Top