13 February 2008 High efficiency mid-infrared OPO based on low-loss orientation-patterned GaAs samples (OP-GaAs)
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Abstract
Nonlinear optical materials play a key role in the development of coherent sources of radiation as they permit the frequency conversion of mature solid-state lasers into spectral ranges where lasers do not exist or perform poorly. The availability of efficient quasi-phasematched infrared materials is thus considered as important for the development of several optronics applications. This paper will review the recent progresses achieved with thick Orientation-Patterned GaAs structures. We will present results obtained in growing a 500 μm thick layer on 2 cm long structures with low optical losses (less than 0.02 cm-1). This loss coefficient is low enough to allow the operation of a highly efficient GaAs OPO in the Mid-IR range.
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David Faye, Eric Lallier, Arnaud Grisard, Bruno Gérard, Christelle Kieleck, Antoine Hirth, "High efficiency mid-infrared OPO based on low-loss orientation-patterned GaAs samples (OP-GaAs)", Proc. SPIE 6875, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications VII, 68750G (13 February 2008); doi: 10.1117/12.762894; https://doi.org/10.1117/12.762894
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