Measurement of the nonlinear optical properties of semiconductors using the irradiance scan technique

Leonel P. Gonzalez; Joel M. Murray; Vincent M. Cowan; Shekhar Guha

doi:10.1117/12.763152

13 February 2008 Measurement of the nonlinear optical properties of semiconductors using the irradiance scan technique

Leonel P. Gonzalez, Joel M. Murray, Vincent M. Cowan, Shekhar Guha

Proceedings Volume 6875, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications VII; 68750R (2008) https://doi.org/10.1117/12.763152
Event: Lasers and Applications in Science and Engineering, 2008, San Jose, California, United States

Abstract

Irradiance scan measurements of the nonlinear absorption and refraction coefficients of CdTe were performed at room temperature and at 77 K and compared to the values obtained in previous experiments using a different technique.

Citation Download Citation

Leonel P. Gonzalez, Joel M. Murray, Vincent M. Cowan, and Shekhar Guha "Measurement of the nonlinear optical properties of semiconductors using the irradiance scan technique", Proc. SPIE 6875, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications VII, 68750R (13 February 2008); https://doi.org/10.1117/12.763152

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available