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13 February 2008 Femtosecond laser damage threshold and nonlinear characterization in bulk transparent SiC materials
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Abstract
Semi-insulating and conducting SiC crystalline transparent substrates were studied after being processed by femtosecond laser radiation (780nm at 160fs). Z-scan and damage threshold experiments were performed on both SiC bulk materials to determine each samples' nonlinear and threshold parameters. "Damage" in this text refers to an index of refraction modification as observed visually under an optical microscope. In addition, a study was performed to understand the damage threshold as a function of numerical aperture. Presented here for the first time, to the best of our knowledge, is the damage threshold, nonlinear index of refraction, and nonlinear absorption measured values.
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G. Logan DesAutels, Chris Brewer, Mark Walker, Shane Juhl, Marc Finet, Scott Ristich, Matt Whitaker, and Peter Powers "Femtosecond laser damage threshold and nonlinear characterization in bulk transparent SiC materials", Proc. SPIE 6875, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications VII, 68751M (13 February 2008); https://doi.org/10.1117/12.765560
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