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25 February 2008 High reliability level on single-mode 980nm-1060 nm diode lasers for telecommunication and industrial applications
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We demonstrate very high reliability level on 980-1060nm high-power single-mode lasers through multi-cell tests. First, we show how our chip design and technology enables high reliability levels. Then, we aged 758 devices during 9500 hours among 6 cells with high current (0.8A-1.2A) and high submount temperature (65°C-105°C) for the reliability demonstration. Sudden catastrophic failure is the main degradation mechanism observed. A statistical failure rate model gives an Arrhenius thermal activation energy of 0.51eV and a power law forward current acceleration factor of 5.9. For high-power submarine applications (360mW pump module output optical power), this model exhibits a failure rate as low as 9 FIT at 13°C, while ultra-high power terrestrial modules (600mW) lie below 220 FIT at 25°C. Wear-out phenomena is observed only for very high current level without any reliability impact under 1.1A. For the 1060nm chip, step-stress tests were performed and a set of devices were aged during more than 2000 hours in different stress conditions. First results are in accordance with 980nm product with more than 100khours estimated MTTF. These reliability and performance features of 980-1060nm laser diodes will make high-power single-mode emitters the best choice for a number of telecommunication and industrial applications in the next few years.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Van de Casteele, M. Bettiati, F. Laruelle, V. Cargemel, P. Pagnod-Rossiaux, P. Garabedian, L. Raymond, D. Laffitte, S. Fromy, D. Chambonnet, and J. P. Hirtz "High reliability level on single-mode 980nm-1060 nm diode lasers for telecommunication and industrial applications", Proc. SPIE 6876, High-Power Diode Laser Technology and Applications VI, 68760P (25 February 2008);

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