Translator Disclaimer
13 February 2008 Investigation of catastrophic degradation in high power multi-mode InGaAs strained quantum well single emitters
Author Affiliations +
Multi-mode InGaAs strained quantum-well single emitters at 920-980nm have become indispensable as pump lasers for various applications. Most previous reports on these lasers have been focused on their performance characteristics with limited reports on failure mode analysis although understanding the physics of failure is crucial in developing a proper physics-based lifetime model. Our group recently reported accelerated lifetest results with accumulated test hours of over 6000 hours and identified catastrophic sudden failures as dominant failure modes. In this paper we report our investigation of catastrophically degraded high power multi-mode single emitters with various destructive and non-destructive techniques including high-resolution TEM. The lasers studied were broad-area strained InGaAs single QW lasers at 940-980nm with typical CW output powers of over 6W at an injection current of 7A with a wall plug efficiency of ~60%. An EBIC technique is employed to identify location of dark line defects in degraded lasers with different amounts of drop in optical output power. A FIB technique is then employed to prepare TEM samples from the DLD areas allowing cross-sectional HR-TEM analysis. This is to investigate generation and growth of defects and dislocations in multi-mode lasers catastrophically degraded under different accelerated stress conditions. Finally, we report our results on deep traps associated with degraded devices as well as with pristine devices using DLTS technique.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yongkun Sin, Nathan Presser, Brendan Foran, and Steven C. Moss "Investigation of catastrophic degradation in high power multi-mode InGaAs strained quantum well single emitters", Proc. SPIE 6876, High-Power Diode Laser Technology and Applications VI, 68760R (13 February 2008);

Back to Top