Paper
13 February 2008 Accurate determination of absolute temperatures of GaAs based high-power diode lasers
M. Ziegler, J. W. Tomm, F. Weik, T. Elsaesser, C. Monte, J. Hollandt, H. Kissel, G. Seibold, J. Biesenbach
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Abstract
Thermal imaging is demonstrated as an attractive alternative for standard temperature measurements in diode lasers. It allows for the determination of time resolved temperature distributions in arbitrary materials of laser devices. Because of the partial mid-infrared transparency of the semiconductor materials involved, several issues complicate the thermal imaging approach. We analyze these detrimental effects for the case of GaAs based high-power diode lasers and demonstrate how to circumvent them. This leads to a deeper insight into the composite thermal emission signal from diode lasers and eventually to an accurate determination of absolute temperatures of semiconductor diode lasers.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Ziegler, J. W. Tomm, F. Weik, T. Elsaesser, C. Monte, J. Hollandt, H. Kissel, G. Seibold, and J. Biesenbach "Accurate determination of absolute temperatures of GaAs based high-power diode lasers", Proc. SPIE 6876, High-Power Diode Laser Technology and Applications VI, 68761A (13 February 2008); https://doi.org/10.1117/12.758879
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Semiconductor lasers

Thermography

High power lasers

Semiconductors

Cameras

Gallium arsenide

Temperature metrology

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