Advances in high-brightness semiconductor lasers

M. L. Osowski; W. Hu; R. M. Lammert; S. W. Oh; P. T. Rudy; T. Stakelon; J. E. Ungar

doi:10.1117/12.763434

13 February 2008 Advances in high-brightness semiconductor lasers

M. L. Osowski, W. Hu, R. M. Lammert, S. W. Oh, P. T. Rudy, T. Stakelon, J. E. Ungar

Proceedings Volume 6876, High-Power Diode Laser Technology and Applications VI; 68761E (2008) https://doi.org/10.1117/12.763434
Event: Lasers and Applications in Science and Engineering, 2008, San Jose, California, United States

Abstract

We present recent advances in high power multimode and single semiconductor lasers. We review high power operation with increased spectral brightness using on-chip internal gratings and increased spatial brightness at wavelengths from the near infrared to the eye-safe regime. New high power, high brightness fiber coupled semiconductor lasers are described.

Citation Download Citation

M. L. Osowski, W. Hu, R. M. Lammert, S. W. Oh, P. T. Rudy, T. Stakelon, and J. E. Ungar "Advances in high-brightness semiconductor lasers", Proc. SPIE 6876, High-Power Diode Laser Technology and Applications VI, 68761E (13 February 2008); https://doi.org/10.1117/12.763434

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available