20 February 2008 Selective area bandgap engineering of InGaAsP/InP quantum well microstructures with an infrared laser rapid thermal annealing technique
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Abstract
Fabrication of wafers with built-in areas of different bandgap materials is of paramount importance for the technology of monolithically integrated devices. Numerous approaches have been proposed and investigated in literature to address this problem especially in III-V basedsemiconductor microstructures. We report on an innovative technique of post-growth selective area bandgap engineering of InGaAsP/InP quantum well (QW) microstructures that is based on infrared laser rapid thermal annealing (Laser-RTA). The method makes use of a 150 W 980 nm laser for background heating of wafers to just below the threshold for quantum well intermixing (QWI) temperatures. Another infrared source, a 30 W TEM00 Nd:YAG laser, is used to increase the temperature above the QWI threshold that leads to the fabrication of different bandgap material. The Laser-RTA technique allows for a significant reduction in the risk of damaging the surface of a semiconductor wafer heated to high temperature with one laser source. Also, it has the potential to fabricate almost arbitrary shaped lines of bandgap engineered material. For the investigated GaInAsP/InP QW microstructures, we have achieved bandgap shifts in excess of 200 nm. We discuss advantages that the proposed Laser-RTA technique offers in the fabrication of monolithically integrated photonic devices.
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R. Stanowski, R. Stanowski, S. Bouaziz, S. Bouaziz, J. J. Dubowski, J. J. Dubowski, } "Selective area bandgap engineering of InGaAsP/InP quantum well microstructures with an infrared laser rapid thermal annealing technique", Proc. SPIE 6879, Photon Processing in Microelectronics and Photonics VII, 68790D (20 February 2008); doi: 10.1117/12.774828; https://doi.org/10.1117/12.774828
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