26 February 2008 Line length scalable high power diode laser with power densities > 100kw/cm2 for industrial Si-annealing applications
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Abstract
We present newly developed high power diode laser modules which are performing at outstanding power densities and line uniformity. The combination of recently designed laser diode bars on passive heat sinks and optimized micro-optics results to laser modules with power densities > 100kW/cm2 in a line length of 12mm x 0.1mm. The usage of non periodic structured homogenizers leads to a homogeneity of less than 3% p/v which allows precise heating and annealing applications. The application for such laser lines are hardening, metallization and annealing of different materials. In the presentation we will show results of thin film Si-a annealing process with direct diode laser annealing.
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Markus Revermann, Markus Revermann, Andreas Bayer, Andreas Bayer, Jens Meinschien, Jens Meinschien, } "Line length scalable high power diode laser with power densities > 100kw/cm2 for industrial Si-annealing applications", Proc. SPIE 6879, Photon Processing in Microelectronics and Photonics VII, 68790R (26 February 2008); doi: 10.1117/12.762956; https://doi.org/10.1117/12.762956
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