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20 February 2008 Study of Ag-In solder as low temperature wafer bonding intermediate layer
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Indium-silver as solder materials for low temperature bonding had been introduced earlier. In theory the final bonding interface composition is determined by the overall materials composition. Wafer bonding based multiple intermediate layers facilitates precise control of the formed alloy composition and the joint thickness. Thus the bonding temperature and post-bonding re-melting temperature could be easily designed by controlling the multilayer materials. In this paper, a more fundamental study of In-Ag solder materials is carried out in chip-to-chip level by using flip-chip based thermocompression bonding. Bonding at 180°C for various time duration under various bonding pressure is studied. Approaches of forming Ag2In with re-melting temperature higher than 400°C at the bonding interface are proposed and discussed. Knowledge learned in this process technology can support us to develop sophisticated wafer level packaging process based wafer bonding for applications of MEMS and IC packages.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Riko I Made, Chee Lip Gan, Chengkuo Lee, Li Ling Yan, Aibin Yu, Seung Wook Yoon, and John H. Lau "Study of Ag-In solder as low temperature wafer bonding intermediate layer", Proc. SPIE 6884, Reliability, Packaging, Testing, and Characterization of MEMS/MOEMS VII, 68840H (20 February 2008);

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