18 February 2008 Microfabricated implantable pressure sensor for flow measurement
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Abstract
A RF wireless capacitive pressure sensor is developed. The sensor has integrated inductor with the pressure sensitive capacitor as LC circuit. The resonant frequency of the sensor changes as the capacitance changes with applied pressure. The sensor uses LPCVD silicon nitride as sensitive membrane and the residual stress of the membrane has been measure as 139MPa. The sensor has size of 10 mm × 4 mm × 0.5 um. The sensor presents a pressure sensitivity of 1.65 MHz/cmH2O in pressure range of 0-20 cmH2O. The deflection of different shape of membranes is discussed. The deflection of square membrane is 130% to circular membrane under same applied pressure.
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Sheng Liu, Reginald Farrow, James L. Zunino, Hee C. Lim, John Federici, Gordon Thomas, "Microfabricated implantable pressure sensor for flow measurement", Proc. SPIE 6884, Reliability, Packaging, Testing, and Characterization of MEMS/MOEMS VII, 68840I (18 February 2008); doi: 10.1117/12.763740; https://doi.org/10.1117/12.763740
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KEYWORDS
Sensors

Silicon

Capacitors

Low pressure chemical vapor deposition

Metals

Plasma enhanced chemical vapor deposition

Reactive ion etching

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