22 February 2008 Thick InGaN growth on several crystal planes of ZnO substrate by metalorganic vapor phase epitaxy
Author Affiliations +
Abstract
InGaN epitaxial film growth has been performed on (0001) c-, (1120) a- and (1100) (see manuscript for full text) m-plane ZnO substrates by metalorganic vapor phase epitaxy in the temperature range of 550°C - 680°C. The grown layers were confirmed to be single crystalline by X-ray diffraction.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. Kawai, Y. Kawai, S. Ohsuka, S. Ohsuka, M. Iwaya, M. Iwaya, S. Kamiyama, S. Kamiyama, H. Amano, H. Amano, I. Akasaki, I. Akasaki, "Thick InGaN growth on several crystal planes of ZnO substrate by metalorganic vapor phase epitaxy", Proc. SPIE 6889, Physics and Simulation of Optoelectronic Devices XVI, 688904 (22 February 2008); doi: 10.1117/12.784113; https://doi.org/10.1117/12.784113
PROCEEDINGS
9 PAGES


SHARE
Back to Top