22 February 2008 Effect of interface polarization charge on the performance of nitride semiconductor light emitting diodes
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Abstract
Most III-V nitride light emitting diodes have an n-down structure with Ga polarity. In such a device, the active layer is grown on top of the n-cladding layer and the p-type cladding layer is grown on top of the active layer. We have analyzed the band structure of such a device and found a reduced effective conduction band barrier due to the positive spontaneous and piezoelectric polarization charge, resulting in large electron overshoot and necessitating the introduction of the commonly employed electron blocking layer. On the other hand, the polarization charge at the corresponding interface for a p-side down device with Ga polarity is negative, resulting in a significant enhancement of the electron barrier and the existence of a 2D hole gas near the interface. These are beneficial to the performance of single heterojunction LEDs.
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Hongen Shen, Hongen Shen, Meredith L. Reed, Meredith L. Reed, Eric D. Readinger, Eric D. Readinger, Michael Wraback, Michael Wraback, } "Effect of interface polarization charge on the performance of nitride semiconductor light emitting diodes", Proc. SPIE 6889, Physics and Simulation of Optoelectronic Devices XVI, 688905 (22 February 2008); doi: 10.1117/12.773871; https://doi.org/10.1117/12.773871
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