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22 February 2008 Temperature dependence of radiative and Auger losses in quantum well lasers
J. Hader, J. V. Moloney, S. W. Koch
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Proceedings Volume 6889, Physics and Simulation of Optoelectronic Devices XVI; 68890E (2008) https://doi.org/10.1117/12.761976
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States
Abstract
Fully microscopic many-body models are used to ivestigate the temperature dependence of radiative and Auger losses in semiconductor lasers. Classical estimates based on simplified models predict carrier density independent temperature dependencies, 1/T for the radiative losses and a temperature activated exponential dependence for the Auger losses. Instead, the micorscopic models reveal for the example of a typical InGaAsP-based structure a 1/T3-dependence for the radiative losses at low carrier densities. For high densities this dependence becomes much weaker and deviates from a simple power law. Auger losses can be described by an exponential dependence for limited temperature ranges if a density dependent activation energy is used. For the threhsold carrier density a temperature dependence close to T2 is found instead of the linear temperature dependence assumed by the simplified models.
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J. Hader, J. V. Moloney, and S. W. Koch "Temperature dependence of radiative and Auger losses in quantum well lasers", Proc. SPIE 6889, Physics and Simulation of Optoelectronic Devices XVI, 68890E (22 February 2008); https://doi.org/10.1117/12.761976
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KEYWORDS
Quantum wells
Optoelectronic devices
Physics
Semiconductor lasers
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