7 February 2008 Strain-compensated AlAs-InGaAs quantum-cascade lasers with emission wavelength 3-5 μm
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A design strategy for short wavelength (equation) quantum-cascade lasers (QCLs) on InP substrates is discussed and the performance of these lasers evaluated. The QCLs are based on strain-compensated AlAs-In0.73Ga0.27As heterostructures grown using gas-source molecular-beam epitaxy on InP substrates. Both composite barriers based on AlAs-In0.55Al0.45As and composite wells based on In0.73Ga0.27As-In0.55Al0.45As are used to achieve laser emission at wavelengths as short as 3.05 μm by avoiding leakage from the upper laser state into either the higher-lying miniband or into indirect states within the heterostructure.
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W. Ted Masselink, W. Ted Masselink, Mykhaylo P. Semtsiv, Mykhaylo P. Semtsiv, Martin Wienold, Martin Wienold, Mikaela Chashnikova, Mikaela Chashnikova, Ismail Bayrakli, Ismail Bayrakli, Matthias Klinkmüller, Matthias Klinkmüller, "Strain-compensated AlAs-InGaAs quantum-cascade lasers with emission wavelength 3-5 μm", Proc. SPIE 6889, Physics and Simulation of Optoelectronic Devices XVI, 688913 (7 February 2008); doi: 10.1117/12.784324; https://doi.org/10.1117/12.784324

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