Monolithic InP-based passively modelocked semiconductor ring lasers at 1.5 µm

Erwin Bente; Martijn Heck; Yohan Barbarin; Sanguan Anantathanasarn; Richard Nötzel; Meint Smit

doi:10.1117/12.784181

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22 February 2008 Monolithic InP-based passively modelocked semiconductor ring lasers at 1.5 μm

Erwin Bente, Martijn Heck, Yohan Barbarin, Sanguan Anantathanasarn, Richard Nötzel, Meint Smit

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Proceedings Volume 6889, Physics and Simulation of Optoelectronic Devices XVI; 688915 (2008) https://doi.org/10.1117/12.784181
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

In this paper an overview is given of the results we have obtained at the COBRA Research Institute in our work on passively modelocked semiconductor lasers operating in the 1.5 μm wavelength region. Most results concern modelocked ring lasers that are realized monolithically in the InP/InGaAsP materials system as well as simulations using lumped element and traveling wave type models. The experimental results show that the ring lasers appear as the more stable type of lasers. The modeling results show the importance of using a symmetrical configuration in the ring laser for stable operation. Most recent results on linear modelocked quantum dot lasers at 1.5 μm indicate the improvements possible using these materials.

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Erwin Bente, Martijn Heck, Yohan Barbarin, Sanguan Anantathanasarn, Richard Nötzel, and Meint Smit "Monolithic InP-based passively modelocked semiconductor ring lasers at 1.5 μm", Proc. SPIE 6889, Physics and Simulation of Optoelectronic Devices XVI, 688915 (22 February 2008); https://doi.org/10.1117/12.784181

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