Paper
22 February 2008 AlGaAsSb/InGaAsSb photovoltaic transistors and high-efficiency solar cell with nano-antenna structures
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Abstract
We present a new design of high sensitivity, multi-spectral capability AlGaAsSb/InGaAsSb phototransistors for infrared sensing and solar energy conversion applications. These devices are grown by molecular beam epitaxy (MBE), which exhibit high responsivity at room-temperature. The 50% cutoff wavelength of spectral photoresponse is 2.2 μm. Similar structures are also investigated for solar cell applications. The possibility of increasing the solar energy conversion is explored by incorporating nano-antenna array into the solar cell. The broad-band nano-antenna is designed using Ansoft HFSS. The results indicate high solar energy conversion can be achieved for highly efficiency, flexible, lightweight solar power generations for the applications such as aircraft, airbase and special operations.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chunchen Lin, Nikolai Faleev, and Dennis Prather "AlGaAsSb/InGaAsSb photovoltaic transistors and high-efficiency solar cell with nano-antenna structures", Proc. SPIE 6890, Optical Components and Materials V, 68900D (22 February 2008); https://doi.org/10.1117/12.763847
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KEYWORDS
Antennas

Solar cells

Metalorganic chemical vapor deposition

Solar energy

Phototransistors

Sensors

Indium gallium arsenide antimonide

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