5 February 2008 304 mW green light emission by frequency doubling of a high-power 1060-nm DBR semiconductor laser diode
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Abstract
We report for the first time, to the best of our knowledge, 304 mW green light emission generated by frequency doubling of the output from a 1060-nm DBR semiconductor laser using a periodically poled MgO-doped lithium niobate waveguide in a compact single-pass configuration. The excellent performance of these DBR lasers, including a kink-free power greater than 750 mW, single-spatial-mode output beam, single-wavelength emission spectra, and high wavelength-tuning efficiency, plays an important role in the generation of high-power green light.
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Hong Ky Nguyen, Martin H. Hu, Yabo Li, Kechang Song, Nick J. Visovsky, Sean Coleman, Chung-En Zah, "304 mW green light emission by frequency doubling of a high-power 1060-nm DBR semiconductor laser diode", Proc. SPIE 6890, Optical Components and Materials V, 68900I (5 February 2008); doi: 10.1117/12.770678; https://doi.org/10.1117/12.770678
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