5 February 2008 304 mW green light emission by frequency doubling of a high-power 1060-nm DBR semiconductor laser diode
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Abstract
We report for the first time, to the best of our knowledge, 304 mW green light emission generated by frequency doubling of the output from a 1060-nm DBR semiconductor laser using a periodically poled MgO-doped lithium niobate waveguide in a compact single-pass configuration. The excellent performance of these DBR lasers, including a kink-free power greater than 750 mW, single-spatial-mode output beam, single-wavelength emission spectra, and high wavelength-tuning efficiency, plays an important role in the generation of high-power green light.
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Hong Ky Nguyen, Hong Ky Nguyen, Martin H. Hu, Martin H. Hu, Yabo Li, Yabo Li, Kechang Song, Kechang Song, Nick J. Visovsky, Nick J. Visovsky, Sean Coleman, Sean Coleman, Chung-En Zah, Chung-En Zah, } "304 mW green light emission by frequency doubling of a high-power 1060-nm DBR semiconductor laser diode", Proc. SPIE 6890, Optical Components and Materials V, 68900I (5 February 2008); doi: 10.1117/12.770678; https://doi.org/10.1117/12.770678
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