Photoluminescence and Raman characterization from Er-implanted InxGa1-xAs bulk crystal

Tomoyuki Arai; Shin-ichiro Uekusa

doi:10.1117/12.762682

5 February 2008 Photoluminescence and Raman characterization from Er-implanted In_xGa_1-xAs bulk crystal

Tomoyuki Arai, Shin-ichiro Uekusa

Proceedings Volume 6890, Optical Components and Materials V; 689015 (2008) https://doi.org/10.1117/12.762682
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

In_xGa_1-xAs bulk crystal is a lattice-matched substrate material for InGaAs-based laser diodes. We prepared an In_xGa_1-xAs with compositional fractions x ranging from 0 to 0.2 and the effect of Er impurity on the photoluminescence (PL) and Raman characterization of an Er-implanted In_xGa_1-xAs bulk crystal was studied. From the results of PL and Raman spectroscopy, it was found that the implantation damage in In_xGa_1-xAs:Er sample is recovered at a temperature of 700°C by the thermal annealing. Maximum PL intensity of Er-related emission was obtained for the In_xGa_1-xAs:Er sample annealed at 700°C in the compositional fractions ranging from 0 to 0.2.

Citation Download Citation

Tomoyuki Arai and Shin-ichiro Uekusa "Photoluminescence and Raman characterization from Er-implanted In_xGa_1-xAs bulk crystal", Proc. SPIE 6890, Optical Components and Materials V, 689015 (5 February 2008); https://doi.org/10.1117/12.762682

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