7 March 2008 Chemical etching of nanocomposite metal-semiconductor films monitored by Raman spectroscopy and surface probe microscopy
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Abstract
The complementary tools of atomic force microscopy (AFM) and Raman spectroscopy are used to extract information on the microstructural properties of nanocomposite n-doped Si (n-Si) and Ag/n-Si films deposited on Si(111) substrates at 400 °C and 550 °C. AFM measurements indicated that Ag/n-Si films had grain sizes and roughness values one order of magnitude higher than n-doped Si films. The onset of metal-mediated crystallization of a-Si in Ag/n-Si films at ~ 400 °C is confirmed by Raman spectroscopy. Spectral Raman red-shifts of the transverse optical phonon region compared to monocrystalline silicon originate from the interplay of phonon confinement and higher defect density caused by n-type doping. Two protocols using the etchants ammonium fluoride - HF (2%::4% ) and ammonium citrate- acetic acid-hydrogen peroxide (2.5%::2.5%::2%) solutions were investigated. A comparison between non-etched and etched films showed little variability in roughness indicating retention of the microstructure.
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Christopher C. Perry, Christopher C. Perry, Tina Brower, Tina Brower, Chichang Zhang, Chichang Zhang, Emanuel Waddell, Emanuel Waddell, Clayton W. Bates, Clayton W. Bates, James W. Mitchell, James W. Mitchell, } "Chemical etching of nanocomposite metal-semiconductor films monitored by Raman spectroscopy and surface probe microscopy", Proc. SPIE 6891, Organic Photonic Materials and Devices X, 689116 (7 March 2008); doi: 10.1117/12.783857; https://doi.org/10.1117/12.783857
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