7 February 2008 Ultrafast piezospectroscopy in semiconductor nanostructures
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Abstract
We use the internal picosecond strain pulses to control the electron energy in a semiconductor quantum well. For generating the strain pulse a 100 nm thick metal transducer was hit by intense laser pulse and a strain pulse with duration ~10 ps and amplitude up to 0.1% was injected into a GaAs substrate. This strain pulse travels strongly directed through the crystal towards the quantum well generating at each momentary position a "nano-earthquake". When the quantum well is hit by this "earth quake", the exciton resonance is shifted on a value up to 10 meV on a ps time scale.
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A. V. Akimov, A. V. Akimov, A. V. Scherbakov, A. V. Scherbakov, T. Berstermann, T. Berstermann, D. R. Yakovlev, D. R. Yakovlev, P. J. S. van Capel, P. J. S. van Capel, J. I. Dijkhuis, J. I. Dijkhuis, M. Bayer, M. Bayer, } "Ultrafast piezospectroscopy in semiconductor nanostructures", Proc. SPIE 6892, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XII, 689205 (7 February 2008); doi: 10.1117/12.760268; https://doi.org/10.1117/12.760268
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