Dynamics of LO phonons in InN studied by subpicosecond time-resolved Raman spectroscopy

K. T. Tsen; Juliann G. Kiang; D. K. Ferry; Hai Lu; William J. Schaff; Hon-Way Lin; Shangjr Gwo

doi:10.1117/12.762319

14 February 2008 Dynamics of LO phonons in InN studied by subpicosecond time-resolved Raman spectroscopy

K. T. Tsen, Juliann G. Kiang, D. K. Ferry, Hai Lu, William J. Schaff, Hon-Way Lin, Shangjr Gwo

Proceedings Volume 6892, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XII; 689206 (2008) https://doi.org/10.1117/12.762319
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

Time-resolved Raman spectroscopy on a subpicosecond time scale has been used to study the phonon dynamics of both the A₁(LO) and the E₁(LO) phonons in InN. From the temperature-dependence of their lifetimes, we demonstrate that both phonons decay primarily into a large wavevector TO phonon and a large wavevector TA/LA phonon consistent with the accepted phonon dispersion relationship for wurtzite InN. Their lifetimes have been found to decrease from 2.2 ps, at the low electron-hole pair density of 5×10¹⁷cm^-3 to 0.25 ps, at the highest density of 2×10¹⁹cm^-3. Our experimental findings demonstrate that carrier-density dependence of LO phonon lifetime is a universal phenomenon in polar semiconductors.

Citation Download Citation

K. T. Tsen, Juliann G. Kiang, D. K. Ferry, Hai Lu, William J. Schaff, Hon-Way Lin, and Shangjr Gwo "Dynamics of LO phonons in InN studied by subpicosecond time-resolved Raman spectroscopy", Proc. SPIE 6892, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XII, 689206 (14 February 2008); https://doi.org/10.1117/12.762319

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