14 February 2008 Dynamics of LO phonons in InN studied by subpicosecond time-resolved Raman spectroscopy
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Proceedings Volume 6892, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XII; 689206 (2008); doi: 10.1117/12.762319
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States
Abstract
Time-resolved Raman spectroscopy on a subpicosecond time scale has been used to study the phonon dynamics of both the A1(LO) and the E1(LO) phonons in InN. From the temperature-dependence of their lifetimes, we demonstrate that both phonons decay primarily into a large wavevector TO phonon and a large wavevector TA/LA phonon consistent with the accepted phonon dispersion relationship for wurtzite InN. Their lifetimes have been found to decrease from 2.2 ps, at the low electron-hole pair density of 5×1017cm-3 to 0.25 ps, at the highest density of 2×1019cm-3. Our experimental findings demonstrate that carrier-density dependence of LO phonon lifetime is a universal phenomenon in polar semiconductors.
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K. T. Tsen, Juliann G. Kiang, D. K. Ferry, Hai Lu, William J. Schaff, Hon-Way Lin, Shangjr Gwo, "Dynamics of LO phonons in InN studied by subpicosecond time-resolved Raman spectroscopy", Proc. SPIE 6892, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XII, 689206 (14 February 2008); doi: 10.1117/12.762319; https://doi.org/10.1117/12.762319
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KEYWORDS
Phonons

Indium nitride

Raman spectroscopy

Picosecond phenomena

Semiconductors

Gallium nitride

Raman scattering

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