Investigation of hot electrons generated from AIN/GaN-based high electron mobility transistor

Suvranta K. Tripathy; Guibao Xu; Xiaodong Mu; Yujie J. Ding; Kejia Wang; Yu Cao; Debdeep Jena; Jacob B. Khurgin

doi:10.1117/12.761013

14 February 2008 Investigation of hot electrons generated from AIN/GaN-based high electron mobility transistor

Suvranta K. Tripathy, Guibao Xu, Xiaodong Mu, Yujie J. Ding, Kejia Wang, Yu Cao, Debdeep Jena, Jacob B. Khurgin

Proceedings Volume 6892, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XII; 689208 (2008) https://doi.org/10.1117/12.761013
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

We have observed that the temperature of the electrons drifting under a relatively-high electric field in an AlN/GaN-based high-electron-mobility transistor is significantly higher than the lattice temperature (i.e. the hot electrons are generated). These hot electrons are produced through the Fröhlich interaction between the drifting electrons and long-lived longitudinal-optical phonons. By fitting electric field vs. electron temperature deduced from the measurements of photoluminescence spectra to a theoretical model, we have deduced the longitudinal-optical-phonon emission time for each electron is to be on the order of 100 fs. This value is consistent with the value measured previously from Raman scattering.

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Suvranta K. Tripathy, Guibao Xu, Xiaodong Mu, Yujie J. Ding, Kejia Wang, Yu Cao, Debdeep Jena, and Jacob B. Khurgin "Investigation of hot electrons generated from AIN/GaN-based high electron mobility transistor", Proc. SPIE 6892, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XII, 689208 (14 February 2008); https://doi.org/10.1117/12.761013

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