14 February 2008 Investigation of hot electrons generated from AIN/GaN-based high electron mobility transistor
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Abstract
We have observed that the temperature of the electrons drifting under a relatively-high electric field in an AlN/GaN-based high-electron-mobility transistor is significantly higher than the lattice temperature (i.e. the hot electrons are generated). These hot electrons are produced through the Fröhlich interaction between the drifting electrons and long-lived longitudinal-optical phonons. By fitting electric field vs. electron temperature deduced from the measurements of photoluminescence spectra to a theoretical model, we have deduced the longitudinal-optical-phonon emission time for each electron is to be on the order of 100 fs. This value is consistent with the value measured previously from Raman scattering.
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Suvranta K. Tripathy, Guibao Xu, Xiaodong Mu, Yujie J. Ding, Kejia Wang, Yu Cao, Debdeep Jena, Jacob B. Khurgin, "Investigation of hot electrons generated from AIN/GaN-based high electron mobility transistor", Proc. SPIE 6892, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XII, 689208 (14 February 2008); doi: 10.1117/12.761013; https://doi.org/10.1117/12.761013
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