14 February 2008 Electron relaxation dynamics at the In-rich (100) surface of InP
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Abstract
The temporal relaxation of optically excited electrons at the In-rich reconstructed InP(100) surface was studied using time-resolved two-photon-photoemission spectroscopy (TR-2PPE). High-energy carriers were generated at laser pump energies chosen to populate hot electron bulk states or the well known C2 surface state via resonant direct optical excitation. The different relaxation pathways arising from these population schemes involve Γ-L-Γ intervalley scattering and the transient occupation of an additional surface state, C1. The dynamics of these processes were recorded with a novel experimental setup using two ultra-low power 150 KHz repetition rate sub-20 fs NOPAs enabling two-colour pump-probe experiments in the linear regime. These experiments provide useful information in understanding the dynamics of devices on the basis of this semiconductor medium such as solar cells and high-speed switching circuits.
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Jodi Szarko, Liana Socaciu-Siebert, Antje Neubauer, Thomas Hannappel, Rainer Eichberger, "Electron relaxation dynamics at the In-rich (100) surface of InP", Proc. SPIE 6892, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XII, 68921M (14 February 2008); doi: 10.1117/12.779241; https://doi.org/10.1117/12.779241
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