28 February 2008 A thick GaN growth using GaN/Si(111) template by hydride vapor phase epitaxy(HVPE)
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Proceedings Volume 6894, Gallium Nitride Materials and Devices III; 689406 (2008); doi: 10.1117/12.765705
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States
Abstract
The thick GaN layers were grown on GaN/Si(111) templates by hydride vapor phase epitaxy (HVPE). The GaN templates were grown by metal organic chemical vapor deposition (MOCVD), and there were remained some cracks on their layers. The silicon (Si) substrates were not treated any patterning process. The size of template was 2inch Si(111) wafer and these templates were directly used for HVPE growth. For the growth of the thick GaN layer, the gas injection system of HVPE was modified for improving its growth rate. The proper growth temperature and V/III ratio gave us a transparent thick GaN layer and its thickness has been over than 100um for 2 hours. After the growth, the Si substrate was etched by Si etching solution. We obtained a transparent thick GaN layer and its size was 1/4 inch as the biggest size and it was bended. Structural and optical properties of thick GaN layer were characterized by high resolution X-ray diffraction (HRXRD) and photoluminescence (PL) measurements.
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Doo Soo Kim, Ho Jun Lee, Yong Jin Kim, Su Kim Jung, Dong Kun Lee, Bo Young Lee, "A thick GaN growth using GaN/Si(111) template by hydride vapor phase epitaxy(HVPE)", Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 689406 (28 February 2008); doi: 10.1117/12.765705; https://doi.org/10.1117/12.765705
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KEYWORDS
Gallium nitride

Silicon

Semiconducting wafers

Metalorganic chemical vapor deposition

Crystals

Etching

Diffraction

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