Modeling and experimental analysis of RPCVD based nitride film growth

C. Martin; K. S. A. Butcher; M. Wintrebert-Fouquet; A. Fernandes; T. Dabbs; P. P.-T. Chen; R. Carmen

doi:10.1117/12.762537

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15 February 2008 Modeling and experimental analysis of RPCVD based nitride film growth

C. Martin; K. S. A. Butcher; M. Wintrebert-Fouquet; A. Fernandes; T. Dabbs; P. P.-T. Chen; R. Carmen

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Proceedings Volume 6894, Gallium Nitride Materials and Devices III; 689407 (2008) https://doi.org/10.1117/12.762537
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

The growth of group-III nitride compound films using the Remote Plasma Chemical Vapour Deposition (RPCVD) process is investigated. The scalability of the technology to larger deposition areas will be discussed. In addition, the key advantages of the RPCVD process for GaN over more conventional deposition methods (such as MOCVD), which are realized through a lower growth temperature, compatibility with glass substrates, in addition to silicon and sapphire, and the complete elimination of toxic NH₃ from the growth process will be presented. These advantages will be discussed via analysis of X-Ray diffraction, Scanning Electron Microscopy (SEM) and Optical Transmission Spectroscopy characterization methods of samples grown using the RPCVD process. In addition, subsequent downstream device processing of double heterojunction devices grown on glass and sapphire substrates will be discussed.

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C. Martin, K. S. A. Butcher, M. Wintrebert-Fouquet, A. Fernandes, T. Dabbs, P. P.-T. Chen, and R. Carmen "Modeling and experimental analysis of RPCVD based nitride film growth", Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 689407 (15 February 2008); https://doi.org/10.1117/12.762537

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